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US 2011/0299342 A1Published application
Flash memory device and systems and reading methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSanggu Kang
Life of this patent
Estimating the term…
Abstract
A read method of a flash memory device is provided which comprises reading a plurality of adjacent memory cells connected with a word line different from a plurality of selected memory cells; reading the plurality of selected memory cells one or more times using a plurality of coupling compensation parameters; and selectively latching the read result of the selected memory cells based on the read result of the adjacent memory cells.
Claims18
A read method of a flash memory device comprising:
- reading a plurality of adjacent memory cells connected with a word line different from a plurality of selected memory cells to obtain a first read result;
- reading the plurality of selected memory cells one or more times using a plurality of coupling compensation parameters to obtain a second read result;
- and
- selectively latching the first read result of the selected memory cells based on the second read result of the adjacent memory cells.
1 more element
A read method of a flash memory device comprising:
- reading a plurality of adjacent memory cells connected with a different word line from a plurality of selected memory cells;
- reading the selected memory cells using a first coupling compensation parameter to obtain first read results;
- latching one read result, corresponding to an adjacent memory cell having a first data value, from among the first read results of the selected memory cells;
- reading the selected memory cells using a second coupling compensation parameter to obtain second read results;
- latching one read result, corresponding to an adjacent memory cell having a second data value, from among the second read results of the selected memory cells;
- reading the selected memory cells using a third coupling compensation parameter to obtain third read results;
- latching one read result, corresponding to an adjacent memory cell having a third data value, from among the third read results of the selected memory cells;
- reading the selected memory cells using a fourth coupling compensation parameter to obtain fourth read results;
- and
- latching one read result, corresponding to an adjacent memory cell having a fourth data value, from among the fourth read results of the selected memory cells.
7 more elements
A read method of a flash memory device comprising:
- reading a plurality of adjacent memory cells connected with a different word line from a plurality of selected memory cells;
- determining coupling compensation parameters each to be applied to the selected memory cells, based on the read results of the adjacent memory cells;
- reading the selected memory cells using the coupling compensation parameters to be applied to respective selected memory cells;
- and
- latching the read results.
2 more elements
Dependencies are inferred from the claim text.