Method for manufacturing resin film for thin film-capacitor and the film therefor
AssigneeShin-Etsu Polymer Co., Ltd.
InventorsKazuhiro SUZUKI, Takashi Gonda, Norimasa Shinada, Yuzo Morioka
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AssigneeShin-Etsu Polymer Co., Ltd.
InventorsKazuhiro SUZUKI, Takashi Gonda, Norimasa Shinada, Yuzo Morioka
Estimating the term…
The present invention provides a method for manufacturing a film for a film capacitor in which a film can be prepared by melt extrusion molding in a thin film having a thickness of 10 μm or less and in which a cost can be cut by simplifying a manufacturing step thereof and a film for a film capacitor. It is a method for manufacturing a film for a film capacitor comprising the steps of charging a melt extrusion molding equipment 10 with a molding material 1 to mold a film 20 for a film capacitor by extruding from a dice 12, interposing the above extruded and molded film 20 for a film capacitor between a pressing roll 31 and a metal roll 32 to cool it and winding up the cooled film 20 for a film capacitor having a thickness of 10 μm or less in order on a winding tube 41 of a winding device 40, wherein the molding material 1 is prepared by adding a fluorocarbon resin to a PEI resin having a glass transition point of 200° C. or higher and a dielectric breakdown voltage of 100 V/μm or more; and a uniaxial elongational viscosity of the above molding material 1 is controlled to a range of 6,000 to 20,000 Pa·s.
A method for manufacturing a film for a film capacitor comprising the steps of feeding a molding material into an extruding equipment, extruding a film for a film capacitor downward from a dice, interposing the above extruded film for a film capacitor between a pressing roll and a cooling roll to cool it and winding up the cooled film for a film capacitor having a thickness of 10 μm or less on a winding device, wherein the molding material is prepared by adding a fluorocarbon resin to a polyetherimide resin having a glass transition point of 200° C. or higher and a dielectric breakdown voltage of 100 V/μm or more;
Dependencies are inferred from the claim text.