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US 2011/0298552 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsChoon Young NG, Kazutaka Takagi, Naotaka Tomita
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Abstract
According to one embodiment, there is a semiconductor device including a first active element, a second active element connected in parallel with the first active element, and a first stabilization circuit connected between a gate of the first active element and a gate of the second active element and configured with a parallel circuit of a gate bypass resistor, a gate bypass capacitor, and a gate bypass inductor, the first stabilization circuit having a resonant frequency equal to an odd mode resonant frequency.
Claims2
A semiconductor device comprising:
- a set of active elements connected in parallel to each other and each respectively adapted to work with a negative resistance accompanying a high-frequency negative resistance oscillation;
- a first stabilization circuit connected between gates of neighboring active elements of the set of active elements and configured with a parallel circuit of a gate bypass resistor, a gate bypass capacitor, and a gate bypass inductor, and
- a second stabilization circuit connected between drains of the neighboring active elements of the set of active elements, and configured with a parallel circuit of a drain bypass resistor, a drain bypass capacitor, and a drain bypass inductor, wherein
- the first stabilization circuit has a resonant frequency equal to an odd mode resonant frequency, the second stabilization circuit having a resonant frequency equal to a frequency of high-frequency negative resistance oscillation.
1 more element
Dependencies are inferred from the claim text.