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AssigneeMitsubishi Electric Corporation
InventorAtsushi NARAZAKI
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A method of testing a semiconductor device includes a conductive foreign matter test step of measuring the resistance value between the first and second conductive patterns to determine whether conductive foreign matter is present between the first and second conductive patterns, a first open circuit test step of measuring the resistance value between two points on the first conductive pattern to determine whether there is an open circuit in the first conductive pattern, and a second open circuit test step of measuring the resistance value between two points on the second conductive pattern to determine whether there is an open circuit in the second conductive pattern. The measurement of the resistance value in each of the test steps is accomplished by pressing probes vertically against the first conductive pattern or the second conductive pattern or both.
A method of testing a semiconductor device including a first conductive pattern formed on a guard ring and a second conductive pattern formed on another guard ring and insulated from said first conductive pattern, said method comprising:
A semiconductor device comprising:
A semiconductor device comprising:
An apparatus for testing a semiconductor device by pressing a probe against a conductive pattern of said semiconductor device, said apparatus comprising:
An apparatus for testing a semiconductor device by pressing a probe against a conductive pattern of said semiconductor device, said apparatus comprising:
Dependencies are inferred from the claim text.