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US 2011/0298121 A1Published application
Power semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsHiroshi Nishibori, Toshiaki Shinohara, Tatsuo Oota
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Abstract
A power semiconductor device according to the present invention includes a heat sink made of Cu and having a thickness of 2 to 3 mm, an insulating substrate bonded on the heat sink with interposition of a first bonding layer (under-substrate solder), and a power semiconductor element mounted on the insulating substrate. In the heat sink, a buffer slot is formed at a periphery of a region bonded to the insulating substrate.
Claims10
A power semiconductor device comprising:
- a heat sink made of Cu and having a thickness of 2 to 3 mm;
- an insulating substrate bonded on said heat sink with interposition of a first bonding layer;
- and
- a power semiconductor element mounted on said insulating substrate,
- wherein in said heat sink, a slot is formed at a periphery of a region bonded to said insulating substrate.
2 more elements
A power semiconductor device comprising:
- an insulating substrate;
- a power semiconductor element bonded on said insulating substrate with interposition of a bonding layer;
- a buffer plate bonded on said power semiconductor element with interposition of a bonding layer;
- and
- an Al wire bonded on said buffer plate, for electrical wiring,
- wherein the linear expansion coefficient of said buffer plate is intermediate between that of said Al wire and that of said power semiconductor element.
3 more elements
Dependencies are inferred from the claim text.