Semiconductor component and method of manufacture

A semiconductor component, comprising:

• a leadframe having at least one semiconductor chip receiving area and a plurality of leadframe leads;
• an integrated circuit chip coupled to a first semiconductor chip receiving area of the at least one semiconductor chip receiving areas and having a plurality of bond pads and at least one gate driver having first and second supply terminals, the first supply terminal coupled to a first bond pad of the plurality of bond pads;
• a first semiconductor device having a control electrode and first and second current carrying electrodes, the first semiconductor device coupled to a second portion of the leadframe;
• a second semiconductor device having a control electrode and first and second current carrying electrodes, the second semiconductor device coupled to a third portion of the leadframe;
• and
• a first bond wire coupled from a second bond pad of the plurality of bond pads to a first leadframe lead of the plurality of leadframe leads, wherein the second current carrying electrode of the second power transistor and the first current carrying electrode of the first power transistor are electrically coupled together and electrically decoupled from the second bond pad of the plurality of bond pads.

A method for manufacturing a semiconductor component, comprising:

• providing a support structure having a major surface and a plurality of support leads;
• providing first and second semiconductor devices and a gate drive chip, each of the first and second semiconductor devices having a control conductor and first and second current carrying conductors and the gate drive chip including first and second gate drive circuits, wherein each of the first and second gate drive circuits has drive nodes and first supply nodes and wherein the first gate drive circuit has a floating supply node;
• coupling the gate drive chip to a first portion of the major surface;
• coupling the floating supply node to a first lead of the plurality of supply leads;
• coupling the first semiconductor device to a second portion of the major surface and the control conductor of the first semiconductor device to the gate drive node of the first drive circuit;
• and
• coupling the second semiconductor device to a third portion of the major surface, the control conductor of the second semiconductor device to the gate drive node of the second drive circuit, and the second current carrying conductor of the second semiconductor device to the first current carrying conductor of the first semiconductor device, wherein the second current carrying conductor of the second semiconductor device and the first current carrying conductor of the second semiconductor device are electrically decoupled from the floating supply node.