Semiconductor device producing method and semiconductor device

A semiconductor device producing method comprising the steps of:

• forming a diffusion suppressing mask having a thin film portion and a thick film portion having a larger film thickness than said thin film portion on a surface of a semiconductor substrate;
• applying a dopant diffusing agent containing a first conductivity type or second conductivity type dopant to cover at least part of a surface of said diffusion suppressing mask;
• forming a high-concentration dopant diffusion layer by diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent through said thin film portion of said diffusion suppressing mask;
• and
• forming a low-concentration dopant diffusion layer by diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent through said thick film portion of said diffusion suppressing mask.

A semiconductor device producing method comprising the steps of:

• forming a diffusion suppressing mask having an opening, a thin film portion and a thick film portion having a larger film thickness than said thin film portion on a surface of a semiconductor substrate;
• applying a dopant diffusing agent containing a first conductivity type or second conductivity type dopant to cover at least part of a surface of said diffusion suppressing mask;
• forming a high-concentration dopant diffusion layer by diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent through at least one of said opening and said thin film portion of said diffusion suppressing mask;
• and
• forming a low-concentration dopant diffusion layer by diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent through said thick film portion of said diffusion suppressing mask.

A semiconductor device producing method comprising the steps of:

• forming a diffusion suppressing mask having an opening and a thick film portion on a surface of a semiconductor substrate;
• applying a dopant diffusing agent containing a first conductivity type or second conductivity type dopant to cover at least part of a surface of said diffusion suppressing mask;
• and
• diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent.

A semiconductor device producing method comprising the steps of:

• forming a diffusion suppressing mask having a thin film portion and a thick film portion having a larger film thickness than said thin film portion on a surface of a semiconductor substrate;
• applying a dopant diffusing agent containing a first conductivity type or second conductivity type dopant to cover at least part of a surface of said diffusion suppressing mask;
• and
• diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent.

A semiconductor device producing method comprising the steps of:

• forming a diffusion suppressing mask having an opening, a thin film portion and a thick film portion having a larger film thickness than said thin film portion on a surface of a semiconductor substrate;
• applying a dopant diffusing agent containing a first conductivity type or second conductivity type dopant to cover at least part of a surface of said diffusion suppressing mask;
• and
• diffusing said dopant into said surface of said semiconductor substrate from said dopant diffusing agent.

A semiconductor device comprising:

• a semiconductor substrate (4);
• and
• a high-concentration first conductivity type dopant diffusion layer, a high-concentration second conductivity type dopant diffusion layer, a low-concentration first conductivity type dopant diffusion layer and a low-concentration second dopant diffusion layer formed on one surface side of said semiconductor substrate, wherein
• said high-concentration first conductivity type dopant diffusion layer and said high-concentration second conductivity type dopant diffusion layer are formed at an interval,
• said low-concentration first conductivity type dopant diffusion layer is arranged adjacently to said high-concentration first conductivity type dopant diffusion layer while said low-concentration second conductivity type dopant diffusion layer is arranged adjacently to said high-concentration second conductivity type dopant diffusion layer, and
• said low-concentration first conductivity type dopant diffusion layer and said low-concentration second conductivity type dopant diffusion layer are adjacent to each other between said high-concentration first conductivity type dopant diffusion layer and said high-concentration second conductivity type dopant diffusion layer.