Silicon dioxide layer deposited with bdeas
AssigneeApplied Materials, Inc.
InventorsYong-Won LEE, Vladimir Zubkov, Mei-Yee SHEK, Li-Qun XIA, Prahallad IYENGAR, Sanjeev BALUJA, Scott A. HENDRICKSON, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Derek R. WITTY
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Abstract
A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
Claims20
A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
- (a) forming a patterned resist layer having a plurality of resist features that are spaced apart from one another;
- and
- (b) depositing a silicon dioxide layer on the resist features of the patterned resist layer by:
- (i) placing the substrate with the patterned resist layer in a process zone;
- and
- (ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas.
An intermediate product used in the fabrication of an electronic circuit, the intermediate product comprising:
- (a) a substrate;
- (b) a patterned resist layer on the substrate, the pattered resist layer having a plurality of spaced apart resist features which have top surfaces and sidewalls, and spacing gaps between the resist features;
- and
- (c) a silicon dioxide layer conformal to the resist features of the patterned resist layer, the conformal silicon dioxide layer covering the top surfaces and sidewalls of the resist features in a thickness that deviates by less than 5%.
A substrate processing apparatus to deposit a silicon dioxide layer on a substrate, the apparatus comprising:
- (a) a process chamber comprising a substrate support to receive a substrate;
- (b) an ozone generator capable of generating ozone;
- (c) a BDEAS vaporizer to generate BDEAS vapor;
- and
- (d) a process gas distributor comprising a gas manifold having a first gas conduit to receive the BDEAS vapor and a second gas conduit to receive the ozone, such that the BDEAS and ozone mix in a mixing zone immediately above the process zone prior to release of the mixed BDEAS and ozone into the process zone.
A through-silicon via fabrication method comprising:
- (a) etching a plurality of through holes in a silicon plate, the through holes comprising sidewalls and bottom walls;
- and
- (b) depositing a silicon dioxide layer on the sidewalls and bottom walls of the through holes by:
- (i) providing in a process zone, the silicon plate having the plurality of through holes;
- and
- (ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas to deposit the silicon oxide layer on the sidewalls and bottom walls of the through holes.
Dependencies are inferred from the claim text.