Epitaxial wafer and method of producing the same
AssigneeSumco Corporation
InventorsNaoshi ADACHI, Tamio MOTOYAMA
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Abstract
An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon lattices.
Claims5
An epitaxial wafer comprising a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a carbon atom concentration of not less than 5.0×1017 atoms/cm3 but not more than 1.0×1021 atoms/cm3 and carbon atoms are existent between its silicon lattices.
Dependencies are inferred from the claim text.