Method for manufacturing semiconductor element
AssigneeNichia Corporation
InventorHiroaki Tamemoto
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Abstract
A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line.
Claims22
A method for manufacturing a semiconductor element, comprising:
- a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions;
- and
- a wafer division step of dividing the wafer along the intended dividing line.
A semiconductor element comprising a substrate having a first main face and a second main face, and a semiconductor layer formed on the side of one main face of the substrate,
- the substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent processed portions.
Dependencies are inferred from the claim text.