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US 2011/0298083 A1Published application
Soi wafer, method for producing same, and method for manufacturing semiconductor device
AssigneePanasonic Corporation
InventorKenji YONEDA
Life of this patent
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Abstract
An SOI wafer including: a supporting substrate 1; a BOX layer 2 provided above the supporting substrate 1, the BOX layer 2 being formed by a thermal oxidization; a gettering layer 3 provided immediately on the BOX layer 2 and mainly composed of a silicon which contains one or more of oxygen, carbon and nitrogen and contains at least oxygen; and an S layer 4 in which semiconductor devices are to be formed, the S layer 4 being mainly composed of a monocrystalline silicon.
Claims22
An SOI wafer comprising:
- a supporting substrate mainly composed of a monocrystalline silicon;
- an insulation layer being a silicon oxide layer provided on a surface of the supporting substrate;
- a gettering layer provided immediately on the insulation layer and mainly composed of a silicon which contains one or more of oxygen, carbon and nitrogen and contains at least oxygen;
- and
- a monocrystalline silicon layer provided immediately on the gettering layer.
2 more elements
A manufacturing method of an SOI wafer, comprising:
- a first wafer forming step of forming a first wafer by forming a monocrystalline silicon layer and a gettering layer in sequence on a first supporting substrate, the gettering layer being mainly composed of a silicon which contains one or more of oxygen, carbon and nitrogen and contains at least oxygen;
- a second wafer forming step of forming a second wafer by forming an insulation layer on a surface of a second supporting substrate mainly composed of a monocrystalline silicon, the insulation layer being a silicon oxide layer;
- a bonding step of bonding the first wafer with the second wafer by bonding a surface of the gettering layer of the first wafer with a surface of the insulation layer of the second wafer;
- and
- a removing step of removing the first supporting substrate from the wafers bonded in the bonding step.
2 more elements
A manufacturing method of an SOI wafer, comprising:
- a first wafer forming step of forming a first wafer on a first supporting substrate by forming a monocrystalline silicon layer and then implanting ions of one or more of oxygen, carbon and nitrogen including at least oxygen into an area in a vicinity of a surface of the monocrystalline silicon layer, by an ion implanting method;
- a second wafer forming step of forming a second wafer by forming an insulation layer on a surface of a second supporting substrate, the insulation layer being a silicon oxide layer, and the second supporting substrate being a monocrystalline silicon substrate;
- a bonding step of bonding the first wafer with the second wafer by bonding a surface of the insulation layer of the second wafer with a surface of the first wafer which is closer to the area into which the ions are implanted than another surface of the first wafer;
- and
- a removing step of removing the first supporting substrate from the wafers bonded in the bonding step.
2 more elements
A manufacturing method of an SOI wafer, comprising:
- a first wafer forming step of forming a first wafer by forming a monocrystalline silicon layer and a polycrystalline or noncrystalline silicon layer in sequence on a first supporting substrate, and then implanting ions of one or more of oxygen, carbon and nitrogen including at least oxygen into the polycrystalline or noncrystalline silicon layer;
- a second wafer forming step of forming a second wafer by forming an insulation layer on a surface of a second supporting substrate, the insulation layer being a silicon oxide layer, and the second supporting substrate being a monocrystalline silicon substrate;
- a bonding step of bonding the first wafer with the second wafer by bonding a surface of the polycrystalline or noncrystalline silicon layer of the first wafer with a surface of the insulation layer of the second wafer;
- and
- a removing step of removing the first supporting substrate from the wafers bonded in the bonding step.
2 more elements
A manufacturing method of an SOI wafer, comprising:
- a first wafer forming step of forming a first wafer by subjecting a first supporting substrate to a heat treatment, thereby causing oxygen to precipitate on a surface of the first supporting substrate, the first supporting substrate being mainly composed of a monocrystalline silicon in which one or more of oxygen, carbon and nitrogen including at least oxygen is contained between lattices;
- a second wafer forming step of forming a second wafer by forming an insulation layer on a surface of a second supporting substrate, the insulation layer being a silicon oxide layer, and the second supporting substrate being a monocrystalline silicon substrate;
- a bonding step of bonding the first wafer with the second wafer by bonding a surface of the insulation layer of the second wafer with the surface of the first wafer on which oxygen is precipitated;
- a removing step of removing an outer surface portion of the first supporting substrate from the wafers bonded in the bonding step;
- and
- a silicon epitaxial layer forming step of forming a monocrystalline silicon epitaxial layer on the first supporting substrate after the removing step.
3 more elements
Dependencies are inferred from the claim text.