Semiconductor element and solid-state imaging device

A solid-state imaging device comprising a plurality of pixels being arrayed, each of the pixels comprising:

• a semiconductor region of first conductivity type;
• a light-receiving surface buried region of second conductivity type buried in an upper portion of the semiconductor region, implementing a photodiode together with the semiconductor region;
• a charge accumulation region of second conductivity type buried in an upper portion of the semiconductor region, continuously to the light-receiving surface buried region, establishing a deeper potential well depth than the light-receiving surface buried region, defining depth direction of potential as a field direction along which charges generated in the photodiode are transported;
• a charge read-out region configured to read out the charges accumulated in the charge accumulation region;
• an exhaust-drain region buried in an upper portion of the semiconductor region, configured to extract the charges from the light-receiving surface buried region;
• a first potential control means configured to modulate:
• extraction of the charges from the light-receiving surface buried region toward a direction to the exhaust-drain region direction;
• and
• transferring of the charges from the light-receiving surface buried region to the charge accumulation region direction,
• only by controlling a potential of a channel formed in an upper portion of the semiconductor region between the light-receiving surface buried region and the exhaust-drain region;
• and
• a second potential control means configured to control a potential of a channel formed in an upper portion of the semiconductor region between the charge accumulation region and the charge read-out region, transferring the charges from the charge accumulation region to the charge read-out region.