Magnetic random access memory with dual spin torque reference layers

A magnetic cell comprising:

• a first fixed magnetic layer;
• a second fixed magnetic layer;
• a free magnetic layer positioned between the first and second fixed magnetic layers;
• and
• terminals configured for providing spin-polarized current through the magnetic layers;
• wherein, a magnetization direction of the first fixed magnetic layer is oriented in the first in-plane diametrical orientation, and the magnetization direction of the second fixed magnetic layer and the easy axis of the free magnetic layer are oriented in the second in-plane diametrical orientation, the first in-plane diametrical orientation being substantially orthogonal to the second in-plane diametrical orientation.

A spin torque random access memory array comprising:

• a plurality of spin torque memory cells configured in an array wherein at least selected spin torque memory cells comprise:
• a first fixed magnetic layer;
• a second fixed magnetic layer;
• and
• a free magnetic layer positioned between the first and second fixed magnetic layers;
• wherein, a magnetization direction of the first fixed magnetic layer is substantially parallel to an easy axis of the free magnetic layer are substantially parallel, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer.