Magnetic tunnel junction with compensation element

A magnetic tunnel junction, comprising:

• a reference element;
• a compensation element;
• a free magnetic layer between the reference element and the compensation element, the free magnetic layer comprises Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15;
• an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference element;
• and
• an electrically insulating and electronically reflective layer having a thickness in a range from 3 to 15 Angstroms and being between the compensation element from the free magnetic layer.

Aspin-transfer torque memory cell, comprising:

• a reference element;
• a compensation element having an opposite magnetization moment to a magnetization moment of the reference element;
• a free magnetic layer between the reference element and the compensation element, the free magnetic layer comprises Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15;
• an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference element;
• an electrically insulating and electronically reflective layer having a thickness in a range from 3 to 15 Angstroms and being between the compensation element from the free magnetic layer;
• and
• an electrically conductive and non-ferromagnetic spacer layer disposed between the compensation element and the electrically insulating and electronically reflective layer.