Integrated circuits having dummy gate electrodes and methods of forming the same

An integrated circuit comprising:

• at least one gate electrode of at least one active transistor disposed over a substrate;
• at least one first dummy gate electrode disposed adjacent to a first side edge of the at least one gate electrode;
• a first doped region disposed in the substrate and adjacent to a first side wall of the at least one first dummy gate electrode, wherein the first doped region has a first conductivity type dopant;
• a second doped region disposed in the substrate and adjacent to a second side wall of the at least one first dummy gate electrode, wherein the second doped region has a second conductivity type dopant that is opposite to the first conductivity type dopant;
• and
• at least one second dummy gate electrode disposed adjacent to a second side edge of the at least one gate electrode, the second side edge being opposite to the first side edge.

A method of forming an integrated circuit, the method comprising:

• forming at least one gate electrode of at least one active transistor, at least one first dummy gate electrode, and at least one second dummy gate electrode over a substrate, wherein the at least one first dummy gate electrode is adjacent to a first side edge of the at least one gate electrode, the at least one second dummy gate electrode is adjacent to a second side edge of the at least one gate electrode, and the second side edge is opposite to the first side edge;
• forming a first doped region disposed in the substrate and adjacent to a first side wall of the at least one first dummy gate electrode, wherein the first doped region has a first conductivity type dopant;
• and
• forming a second doped region disposed in the substrate and adjacent to a second side wall of the at least one first dummy gate electrode, wherein the second doped region has a second conductivity type dopant that is opposite to the first conductivity type dopant.