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US 2011/0298055 A1Published application
Semiconductor device and manufacturing method for the same
AssigneeKabushiki Kaisha Toshiba
InventorsKazuaki Nakajima, Kyoichi Suguro
Life of this patent
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Abstract
In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.
Claims10
A semiconductor device, comprising:
- an N-type MOS transistor having a first gate electrode comprising a first conductor film, which comes in contact with a gate insulation film;
- and
- a P-type MOS transistor having a second gate electrode comprising a second conductor film, which comes in contact with the gate insulation film, and which contains carbon in a higher concentration than the concentration of carbon contained in the first conductor film.
-20. (canceled)
Dependencies are inferred from the claim text.