Single-gate finfet and fabrication method thereof
OwnerShing-Hwa Renninventor
Life of this patent
Estimating the term…
Abstract
A single-gate FinFET structure includes an active fin structure having two enlarged head portions and two respective tapered neck portions that connect the enlarged head portions with an underlying ultra-thin body. Two source/drain regions are doped in the two enlarged head portions respectively. An insulation region is interposed between the two source/drain regions. A trench isolation structure is disposed at one side of the tuning fork-shaped fin structure. A single-sided sidewall gate electrode is disposed on a vertical sidewall of the active fin structure opposite to the trench isolation structure.
Claims23
A single-gate fin field-effect-transistor, comprising:
- an active fin structure comprising two enlarged head portions and a tapered neck portion that connects the enlarged head portions with an underlying ultra-thin body;
- two source/drain regions doped in the two enlarged head portions respectively;
- an insulation region interposed between the two source/drain regions;
- a trench isolation structure disposed at one side of the active fin structure;
- and
- a single-sided sidewall gate electrode disposed on a vertical sidewall of the active fin structure opposite to the trench isolation structure.
A single-gate fin field-effect-transistor, comprising:
- an active fin structure comprising two head portions, each connected to a respective tapered neck portion that connects the head portions with an underlying body between the two neck portions and having an ultra-thin channel region, the two head portions each having an enlarged surface area with respect to the respective tapered neck portion;
- a trench isolation structure disposed at one side of the active fin structure;
- and
- a sidewall gate electrode disposed on a single side of a vertical sidewall of the active fin structure that is opposite to the trench isolation structure.
A single-gate fin field-effect-transistor, comprising:
- an active fin structure comprising two head portions, each connected to a respective tapered neck portion that connects the head portions with an underlying body between the two neck portions and having an ultra-thin channel region, the two head portions each having an enlarged contact area with respect to the respective tapered neck portion, and each having a width that is greater than that of the body;
- a trench isolation structure disposed at one side of the active fin structure;
- and
- a sidewall gate electrode disposed on a single side of a vertical sidewall of the active fin structure that is opposite to the trench isolation structure.
A DRAM array, comprising:
- an array of fin field-effect-transistors comprising two mirror symmetrical single-gate fin field-effect-transistors arranged in two adjacent columns and in the same row of the DRAM array, wherein each of the single-gate fin field-effect-transistors is fabricated in an active fin structure comprising two enlarged head portions and a tapered neck portion that connects the enlarged head portions with an underlying ultra-thin body;
- a trench isolation structure disposed at one side of the active fin structure;
- and
- a single-sided sidewall gate electrode disposed on a vertical sidewall of the active fin structure opposite to the trench isolation structure.
An array of fin field-effect-transistors, comprising:
- two mirror symmetrical single-gate fin field-effect-transistors arranged in two adjacent columns and in the same row of the array, each of the two mirror symmetrical single-gate fin field-effect-transistors comprising:
- an active fin structure comprising an underlying body including a channel region of the array;
- two head portions above the underlying body, where source/drain regions are formed, wherein the two head portions are enlarged compared to the underlying body;
- and a tapered neck portion that connects the head portions with the underlying body;
- a bottle-shaped trench isolation structure disposed between the head portions, the tapered neck portion and the underlying body of two of the active fin structures;
- and
- single-sided sidewall gate electrodes disposed on a vertical sidewall of each active fin structure opposite to the trench isolation structure.
Dependencies are inferred from the claim text.