Three dimensional semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Hoon SON, Kihyun Hwang
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Abstract
Provided are a three-dimensional semiconductor memory device and manufacturing method of the three-dimensional semiconductor memory device. The three-dimensional semiconductor memory device may include a gate structure on a substrate with the gate structure including a plurality of gate electrodes. Conductive lines are disposed between the gate structure and the substrate. A horizontal semiconductor pattern is disposed between the gate structure and the conductive line. And a vertical semiconductor pattern penetrating the gate structure is connected to the horizontal semiconductor pattern.
Claims21
A three-dimensional semiconductor memory device, comprising:
- a gate structure on a substrate, the gate structure including a plurality of gate electrodes;
- conductive lines between the gate structure and the substrate;
- a horizontal semiconductor pattern between the gate structure and the conductive lines;
- and
- a vertical semiconductor pattern penetrating the gate structure and connected to the horizontal semiconductor pattern.
16-20. (canceled)
A three-dimensional semiconductor memory device, comprising:
- first and second gate structures on a substrate, each of the first and second gate structures comprising a plurality of gate electrodes;
- first and second horizontal semiconductor patterns disposed between the first and second gate structures and the substrate, respectively;
- and
- a vertical semiconductor pattern disposed between the first and second gate structures on the substrate.
Dependencies are inferred from the claim text.