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US 2011/0298028 A1Published application
Hafnium tantalum titanium oxide films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. An embodiment may include forming hafnium tantalum titanium oxide film using a monolayer or partial monolayer sequencing process such as atomic layer deposition.
Claims20
An electronic device comprising:
- a dielectric disposed in a device in an integrated circuit, the dielectric including a hafnium tantalum titanium oxide doped with a metal or a compound of two or more different elements, the metal being different from hafnium, tantalum, and titanium.
An electronic device comprising:
- a memory having an array of memory cells in an integrated circuit, each memory cell having a dielectric including a hafnium tantalum titanium oxide doped with a metal or a compound of two or more different elements, the metal being different from hafnium, tantalum, and titanium.
A method comprising:
- forming a dielectric disposed in a device in an integrated circuit;
- and
- forming a doped hafnium tantalum titanium oxide in the dielectric, the doped hafnium tantalum titanium oxide doped with a metal or a compound of two or more different elements, the metal being different from hafnium, tantalum, and titanium.
Dependencies are inferred from the claim text.