Manufacturing method for solid-state image pickup device, solid-state image pickup device and image pickup apparatus
AssigneeSony Corporation
InventorsSANGHOOM HA, HIROAKI ISHIWATA
Life of this patent
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Abstract
A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation region formed within the substrate, a first impurity region formed within the substrate and located above the charge accumulation region, and a gate electrode disposed on a surface of the substrate which is closer to the first impurity region. Further, a portion of the first impurity region and the charge accumulation region extend underneath a portion of the gate electrode, and edges of the charge accumulation region and first impurity region which lie underneath the gate electrode are in registry with each other.
Claims18
A solid-state image pickup device comprising:
- a substrate;
- a first charge accumulation region formed within the substrate;
- a first impurity region formed within the substrate and located above the charge accumulation region;
- and
- a gate electrode disposed on a surface of the substrate which is closer to the first impurity region, wherein,
- a portion of the first impurity region and the charge accumulation region extends underneath a portion of the gate electrode, and
- edges of the charge accumulation region and first impurity region which lie underneath the gate electrode are in registry with each other.
A method of manufacturing a solid-state image pickup device comprising:
- forming a first charge accumulation region above the first impurity region via ion implantation;
- forming a first impurity region above the charge accumulation region via ion implantation;
- and
- disposing a gate electrode on a surface of the substrate which is closer to the first impurity region, wherein,
- a portion of the first impurity region and the charge accumulation region extend underneath a portion of the gate electrode, and
- edges of the charge accumulation layer and second impurity region which lie underneath the gate electrode are in registry with each other.
A method of manufacturing a solid-state image pickup device comprising:
- forming a charge accumulation region within the substrate
- via ion implantation;
- forming a first impurity region above the charge accumulation region via ion implantation;
- and
- disposing a gate electrode on a surface of the substrate which is closer to the first impurity region, wherein,
- a portion of the first impurity region and the charge accumulation layer extend underneath a portion of the gate electrode, and
- the first impurity region is formed in self-alignment with the charge accumulation region at least with respect to edges of the second impurity region and the charge accumulation region extending underneath the gate electrode.
An apparatus comprising a solid-state image pickup device, the solid-state image pickup device comprising:
- a substrate;
- a charge accumulation region formed within the substrate;
- a first impurity region formed within the substrate and located above the charge accumulation region;
- and
- a gate electrode disposed on a surface of the substrate which is closer to the second impurity region, wherein,
- a portion of the first impurity region and the charge accumulation region extends underneath a portion of the gate electrode, and
- edges of the charge accumulation region and first impurity region which lie underneath the gate electrode are in registry with each other.
Dependencies are inferred from the claim text.