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US 2011/0298020 A1Published application
Semiconductor device
AssigneesRenesas Electronics Corporation, Hitachi Tohbu Semiconductor, Ltd.
InventorsRyoichi KAJIWARA, Masahiro Koizumi, Toshiaki Morita, Kazuya Takahashi, Munehisa Kishimoto, Shigeru Ishii, Toshinori Hirashima, Yasushi Takahashi, Toshiyuki Hata, Hiroshi Sato, Keiichi Ookawa
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Abstract
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
Claims4
A semiconductor device comprising:
- a semiconductor chip including a MOSFET having an obverse surface and a reverse surface opposite to the obverse surface;
- a first electrode of the MOSFET formed on the obverse surface,
- a second electrode of the MOSFET formed on the obverse surface, and
- a third electrode of the MOSFET formed on the reverse surface,
- a first conductive member having a first top surface and a first bottom surface opposite to the first top surface and connecting with the first electrode of the semiconductor chip electrically;
- a second conductive member having a second top surface and a second bottom surface opposite to the second top surface and connecting with the second electrode of the semiconductor chip electrically;
- a third conductive member having a third top surface and a third bottom surface opposite to the third top surface and connecting with the third electrode of the semiconductor chip electrically;
- and
- a sealing body having a top surface and a bottom surface opposite to the top surface and sealing the semiconductor chip, and parts of the first, second, and third conductive members;
- wherein the first conductive member has a first portion, a second portion, and a third portion,
- the first portion of the first conductive member is positioned over the first electrode of the semiconductor chip, the first bottom surface of the first portion of the first conductive member is electrically connected with the first electrode of the semiconductor chip,
- the second portion is positioned between the first and third portions, and
- the third portion is positioned under the obverse surface of the semiconductor chip and next to a first side of the semiconductor chip in plan view,
- wherein the third conductive member is positioned under the third electrode of the semiconductor chip, the third top surface of the third conductive member is electrically connected with the third electrode of the semiconductor chip,
- wherein a part of the first top surface of the first portion of the first conductive member is exposed from the top surface of the sealing body,
- wherein a part of the third bottom surface of the third conductive member is exposed from the bottom surface of the sealing body,
- wherein the first portion of the first conductive member overlaps the first side of the semiconductor chip in plan view, and
- wherein a height of the first bottom surface of the third portion of the first conductive member and a height of the third bottom surface of the third conductive member are same.
15 more elements
A semiconductor device comprising:
- a semiconductor chip including a MOSFET having an obverse surface and a reverse surface opposite to the obverse surface;
- a source electrode of the MOSFET formed on the obverse surface,
- a gate electrode of the MOSFET formed on the obverse surface, and
- a drain electrode of the MOSFET formed on the reverse surface,
- a first conductive member having a first top surface and a first bottom surface opposite to the first top surface and connecting with the source electrode of the semiconductor chip electrically;
- a second conductive member having a second top surface and a second bottom surface opposite to the second top surface and connecting with the gate electrode of the semiconductor chip electrically;
- a third conductive member having a third top surface and a third bottom surface opposite to the third top surface and connecting with the drain electrode of the semiconductor chip electrically;
- and
- a sealing body having a top surface and a bottom surface opposite to the top surface and sealing the semiconductor chip, and parts of the first, second, and third conductive members;
- wherein the first conductive member has a first portion, a second portion, and a third portion,
- the first portion of the first conductive member is positioned over the source electrode of the semiconductor chip, the first bottom surface of the first portion of the first conductive member is electrically connected with the source electrode of the semiconductor chip,
- the second portion is positioned between the first and third portions, and
- the third portion is positioned under the obverse surface of the semiconductor chip and next to a first side of the semiconductor chip in plan view,
- wherein the third conductive member is positioned under the drain electrode of the semiconductor chip, the third top surface of the third conductive member is electrically connected with the drain electrode of the semiconductor chip,
- wherein a part of the first top surface of the first portion of the first conductive member is exposed from the top surface of the sealing body,
- wherein a part of the third bottom surface of the third conductive member is exposed from the bottom surface of the sealing body,
- wherein the first portion of the first conductive member overlaps the first side of the semiconductor chip in plan view, and
- wherein a height of the first bottom surface of the third portion of the first conductive member and a height of the third bottom surface of the third conductive member are same.
15 more elements
Dependencies are inferred from the claim text.