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US 2011/0298015 A1Published application
Sensing device
OwnerTung-Ming Pan, Min-Hsien Wu +2inventors
InventorsTung-Ming Pan, Min-Hsien Wu, Ming-De Huang, Chao-Sung Lai
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Abstract
A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.
Claims8
A sensing device comprising:
- a semiconductor layer of a field effect semiconductor having upper and lower surfaces;
- a conductive layer formed on said lower surface of said semiconductor layer;
- and
- a sensor layer of an insulator formed on said upper surface of said semiconductor layer;
- wherein said insulator is made from lanthanide-titanium oxide.
2 more elements
Dependencies are inferred from the claim text.