Semiconductor light emitting device and method for fabricating the same
AssigneePanasonic Corporation
InventorsHiroyuki HAGINO, Hiroshi OHNO, Kazuhiko YAMANAKA, Nobuaki NAGAO, Takahiro HAMADA
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Abstract
A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure.
Claims15
A semiconductor light emitting device comprising:
- a nitride semiconductor layer formed on a substrate and including a first cladding layer, an active layer, and a second cladding layer;
- and
- a current blocking layer configured to selectively inject a current into the active layer,
- wherein
- the second cladding layer has a stripe-shaped ridge portion, and
- the current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure.
A method for fabricating a semiconductor light emitting device comprising the steps of:
- (a) successively forming, on a substrate, a first cladding layer, an active layer, and a second cladding layer each made of a nitride semiconductor;
- (b) forming a stripe-shaped ridge portion in the second cladding layer;
- and
- (c) selectively epitaxially growing zinc oxide on both sides of the ridge portion by liquid phase growth.
Dependencies are inferred from the claim text.