Semiconductor light emitting device
AssigneeKabushiki Kaisha Toshiba
InventorsMiyuki Izuka, Yosuke Akimoto, Akihiro Kojima, Yoshiaki Sugizaki
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Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
Claims20
A semiconductor light emitting device, comprising:
- a semiconductor layer including a first major surface, a second major surface opposite to the first major surface, and a light emitting layer;
- a first electrode provided on a region including the light emitting layer on the second major surface;
- a second electrode provided on the second major surface and at least partially interposed in the first electrode in a planar view,
- a first insulating layer provided on the second major surface side of the semiconductor layer;
- a first interconnect layer provided on the first insulating layer on a side opposite to the semiconductor layer, the first interconnect layer provided in a first opening formed in the first insulating layer reaching the first electrode, and the first interconnect layer connected to the first electrode;
- a second interconnect layer provided on the first insulating layer on the side opposite to the semiconductor layer, the second interconnect layer provided in a second opening formed in the first insulating layer reaching the second electrode, and the second interconnect layer connected to the second electrode;
- a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;
- a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode;
- and
- a second insulating layer provided between a side face of the first metal pillar and a side face of the second metal pillar.
A semiconductor light emitting device, comprising:
- a semiconductor layer including a first major surface, a second major surface opposite to the first major surface, and a light emitting layer;
- a first electrode provided on a region including the light emitting layer on the second major surface;
- a second electrode provided on the second major surface, the second electrode enclosing the first electrode in a planar view;
- a first insulating layer provided on the second major surface side of the semiconductor layer;
- a first interconnect layer provided on the first insulating layer on a side opposite to the semiconductor layer, the first interconnect layer provided in a first opening formed in the first insulating layer reaching the first electrode, and the first interconnect layer connected to the first electrode;
- a second interconnect layer provided on the first insulating layer on the side opposite to the semiconductor layer, the second interconnect layer provided in a second opening formed in the first insulating layer reaching the second electrode, and the second interconnect layer connected to the second electrode;
- a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;
- a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode;
- and
- a second insulating layer provided between a side face of the first metal pillar and a side face of the second metal pillar.
Dependencies are inferred from the claim text.