Semiconductor light emitting device

An optoelectronic semiconductor body that is provided for emitting electromagnetic radiation from a front side of the semiconductor body, the optoelectronic semiconductor body comprising:

• a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation,
• a first electrical connecting layer arranged at a rear side of semiconductor layer sequence, the rear side opposite the front side,
• a second electrical connecting layer arranged at the rear side of the semiconductor layer sequence, and
• a separating layer, wherein the first and second electrical connecting layers are electrically insulated from one another by the separating layer,
• wherein the first electrical connecting layer, the second electrical connecting layer and the separating layer overlap laterally,
• wherein a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in a direction of the front side, and
• wherein the first electrical connecting layer has an electrical contact area which is suitable for electrically contacting the semiconductor body from the front side and/or the second electrical connecting layer has an electrical contact area which is suitable for electrically contacting the semiconductor body from the front side.

A method for producing an optoelectronic semiconductor body that is provided for emitting electromagnetic radiation from a front side of the semiconductor body, the method comprising:

• epitaxially growing a semiconductor layer sequence on a growth substrate, the semiconductor layer sequence comprising an active layer suitable for generating electromagnetic radiation;
• forming a first electrical connecting layer over a rear side of the semiconductor layer sequence, the rear side opposite the front side;
• forming a breakthrough in the active layer;
• forming a separating layer over the rear side of the semiconductor layer sequence;
• forming a second electrical connecting layer over the rear side of the semiconductor layer sequence;
• and
• forming an electrical contact area of the first electrical connecting layer in such fashion that it is suitable for electrically contacting the semiconductor body from its front side and/or forming an electrical contact area of the second electrical connecting layer in such fashion that it is suitable for electrically contacting the semiconductor body from its front side;
• wherein the first electrical connecting layer, the separating layer and the second electrical connecting layer are formed in a laterally overlapping fashion,
• wherein a partial region of the second electrical connecting layer is formed in the breakthrough, and
• wherein the second electrical connecting layer is electrically insulated from the first electrical connecting layer by the separating layer.

An optoelectronic semiconductor body that is provided for emitting electromagnetic radiation from a front side of the semiconductor body, the optoelectronic semiconductor body comprising:

• a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation,
• a first electrical connecting layer arranged at a rear side of the semiconductor layer sequence, the rear side opposite the front side,
• a second electrical connecting layer arranged at the rear side of the semiconductor layer sequence,
• a separating layer, and
• a semiconducting or electrically insulating mirror layer having a plurality of openings,
• wherein the first and second electrical connecting layers are electrically insulated from one another by the separating layer,
• wherein the first electrical connecting layer, the second electrical connecting layer and the separating layer overlap laterally,
• wherein a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in a direction of the front side, and
• wherein the semiconducting or electrically insulating mirror layer is arranged in places between the semiconductor layer sequence and the first electrical connecting layer, and the first electrical connecting layer extends through the openings to the semiconductor layer sequence.

An optoelectronic semiconductor body that is provided for emitting electromagnetic radiation from a front side of the semiconductor body, the optoelectronic semiconductor body comprising:

• a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation,
• a first electrical connecting layer arranged at a rear side of the semiconductor layer sequence, the rear side opposite the front side,
• a second electrical connecting layer arranged at the rear side of the semiconductor layer sequence, and
• a separating layer, wherein the first and second electrical connecting layers are electrically insulated from one another by the separating layer,
• wherein the first electrical connecting layer, the second electrical connecting layer and the separating layer overlap laterally,
• wherein a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in a direction of the front side, and
• wherein the first and/or the second electrical connecting layer has a multi-layer structure with an adhesion promoting layer and a reflector layer, the adhesion promoting layer being provided for improving adhesion of the reflector layer to the semiconductor layer sequence and/or the separating layer.