Optical semiconductor device and method for manufacturing same

An optical semiconductor device, comprising:

• a light emitting layer including a first major surface, a second major surface, a first electrode, and a second electrode, the second major surface being a surface opposite to the first major surface, the first electrode and the second electrode being formed on the second major surface;
• a fluorescent layer provided on the first major surface, the fluorescent layer including a fluorescer configured to absorb light emitted from the light emitting layer and emit light of a different wavelength;
• a first metal post provided on the first electrode;
• a second metal post provided on the second electrode;
• and
• a sealing layer provided on the second major surface, the sealing layer being configured to cover a side surface of the light emitting layer and seal the first metal post and the second metal post while leaving an end portion of the first metal post and an end portion of the second metal post exposed.

A method for manufacturing an optical semiconductor device, comprising:

• forming a light emitting layer by forming a plurality of sets of a positive electrode and a negative electrode on a first major surface side of a semiconductor stacked body including a plurality of semiconductor layers, the semiconductor stacked body being separated from a substrate after being epitaxially grown on the substrate;
• forming a transparent layer on a second major surface side of the light emitting layer opposite to the first major surface, the transparent layer being transparent to light emitted from the light emitting layer;
• and
• performing singulation for each of the sets of the positive electrode and the negative electrode.