Light source apparatus using semiconductor light emitting device

A light source apparatus, comprising:

• a semiconductor light emitting device including a light emitting unit, a first conductive member, a second conductive member, a sealing member, and an optical layer;
• a mounting substrate including a base body, a first substrate electrode, and a second substrate electrode, the first substrate electrode and the second substrate electrode being provided on a surface of the base body to oppose the semiconductor light emitting device;
• a first connection member configured to electrically connect the first conductive member to the first substrate electrode;
• and
• a second connection member configured to electrically connect the second conductive member to the second substrate electrode,
• the light emitting unit including:
• a semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the second semiconductor layer and a portion of the first semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side of the semiconductor stacked body and a second major surface on a second semiconductor layer side of the semiconductor stacked body;
• a first light emitting unit electrode electrically connected to the first semiconductor layer on a second major surface side;
• and
• a second light emitting unit electrode electrically connected to the second semiconductor layer on the second major surface side,
• the first conductive member being electrically connected to the first light emitting unit electrode and including a first columnar portion provided on the second major surface,
• the second conductive member being electrically connected to the second light emitting unit electrode and including a second columnar portion provided on the second major surface,
• the sealing member covering a side surface of the first conductive member and a side surface of the second conductive member,
• the optical layer being provided on the first major surface of the semiconductor stacked body, the optical layer including a wavelength conversion unit, the wavelength conversion unit being configured to absorb an emitted light emitted from the light emitting layer and emit a light having a wavelength different from a wavelength of the emitted light,
• a surface area of the second substrate electrode being not less than 100 times a cross-sectional area of the second columnar portion cut by a plane parallel to the second major surface.