Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
AssigneeKabushiki Kaisha Toshiba
InventorTomomichi NAKA
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AssigneeKabushiki Kaisha Toshiba
InventorTomomichi NAKA
Estimating the term…
According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.
A semiconductor light emitting device comprising:
A method for manufacturing a semiconductor light emitting device, the device including:
Dependencies are inferred from the claim text.