Semiconductor light emitting device and method for manufacturing same

A method for manufacturing a semiconductor light emitting device, the semiconductor light emitting device including a light emitting unit, a first conductive member, an insulating layer, a second conductive member, a sealing member, and an optical layer, the light emitting unit including a semiconductor stacked body, a first electrode, and a second electrode, the semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side and a second major surface on a second semiconductor layer side, the first electrode being electrically connected to the first semiconductor layer on a second major surface side, the second electrode being electrically connected to the second semiconductor layer on the second major surface side, the first conductive member being electrically connected to the first electrode, the first conductive member including a first columnar portion provided on the second major surface to cover a portion of the second semiconductor layer on the second major surface side, the first columnar portion being separate from the second semiconductor layer, the insulating layer being provided between the first columnar portion and the portion of the second semiconductor layer on the second major surface side, the second conductive member being electrically connected to the second electrode and including a second columnar portion provided on the second major surface, the sealing member covering a side surface of the first conductive member and a side surface of the second conductive member, the optical layer being provided on the first major surface of the semiconductor stacked body and including a wavelength conversion unit configured to absorb an emitted light emitted from the light emitting layer and emit light having a wavelength different from a wavelength of the emitted light, the method comprising:

• forming the insulating layer to cover the portion of the second semiconductor layer on the second major surface side;
• and
• forming a conductive film on the insulating layer covering the portion of the second semiconductor layer on the second major surface side, the conductive film being used to form at least a portion of the first conductive member.