US 2011/0297980 A1Published application

Semiconductor light emitting device and method for manufacturing same

AssigneeKabushiki Kaisha Toshiba

InventorsYoshiaki Sugizaki, Hideki Shibata, Akihiro Kojima, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu

Life of this patent

Estimating the term…

Loading patent…

Abstract

According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.

Claims20

Dependent claims

A semiconductor light emitting device comprising:

a light emitting chip including:
a semiconductor layer including a light emitting layer, a first major surface, and a second major surface opposite to the first major surface;
a first electrode provided on the second major surface in a region including the light emitting layer;
a second electrode provided on the second major surface,
an insulating layer provided on the second major surface side of the semiconductor layer;
a first interconnect layer provided in a first opening and on a face of the insulating layer on a side opposite to the semiconductor layer to connect to the first electrode, the first opening being formed to reach the first electrode;
a second interconnect layer provided in a second opening and on a face of the insulating layer on the side opposite to the semiconductor layer to connect to the second electrode, the second opening being formed to reach the second electrode;
a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode;
a second metal pillar provided on the face of the second interconnect layer on the side opposite to the second electrode;
and
a resin layer provided between the first metal pillar and the second metal pillar;
and
a fluorescent material layer provided on the first major surface and having a larger planer size than the light emitting chip.

10 more elements

A method for manufacturing a semiconductor light emitting device, comprising:

forming a first interconnect layer in a first opening of an insulating layer and on a surface of the insulating layer on a side opposite to a semiconductor layer, the insulating layer being provided on a second major surface side of the semiconductor layer which is provided on a substrate with being separated into pieces by a separating trench and includes a light emitting layer, a first major surface on the substrate side, and the second major surface opposite to the first major surface, the first opening which reaches a first electrode provided on the second major surface;
forming a second interconnect layer in a second opening of the insulating layer and on the surface of the insulating layer on the side opposite to the semiconductor layer, the second opening which reaches a second electrode provided on the second major surface;
forming a first metal pillar on a face of the first interconnect layer on a side opposite to the first electrode;
forming a second metal pillar on the face of the second interconnect layer on the side opposite to the second electrode;
forming a resin layer between a side face of the first metal pillar and a side face of the second metal pillar;
dicing the insulating layer and the resin layer at a position of the separating trench to divide a light emitting chip into pieces, the light emitting chip including the semiconductor layer, the first electrode, the second electrode, the insulating layer, the first interconnect layer, the second interconnect layer, the first metal pillar, the second metal pillar, and the resin layer;
placing the plurality of light emitting chips on a fluorescent material layer at a second pitch with the first major surface facing the fluorescent material layer, the second pitch being larger than a first pitch on the substrate;
and
dicing a portion of the fluorescent material layer between the plurality of light emitting chips.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/886,709Filed 21 Sep 2010
Priority: JP 2010-1279673 Jun 2010
Published: 8 Dec 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10H 20/0133
Having light-emitting regions comprising only Group III-V materials: with a substrate not being Group III-V materials
H10H 20/0137
Having light-emitting regions comprising only Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/831
Electrodes: characterised by their shape