Light-emitting device and method of manufacturing the same

A method for manufacturing a light-emitting device, comprising:

• removing a substrate from a semiconductor layer, the semiconductor layer including a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first main surface and the second main surface, and a light-emitting layer, a first electrode portion and a second electrode portion being provided on the second main surface of the semiconductor layer, a first insulating film covering the second main surface of the semiconductor layer and the third main surface of the semiconductor layer being provided, a metal layer stacked on at least the second electrode portion of the first and the second electrode portions being provided, the metal layer extending until reaching a part of the first insulating film, the part being continuously extended from the first insulating film which covers the third main surface, the first main surface facing the substrate, the removing being performed by irradiating the semiconductor layer with laser light through the substrate,
• the first insulating film has band-gap energy larger than energy of the laser light.