Ac switch
AssigneeRohm Co., Ltd.
InventorMineo MIURA
Life of this patent
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Abstract
An AC switch includes a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a second output terminal connected to the drain of the second compound semiconductor MOSFET. The withstand voltage between the first output terminal and the second output terminal in an off state is not less than 400 V. The resistance between the first output terminal and the second output terminal in an on state is not more than 20 mΩ.
Claims18
An AC switch comprising:
- a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other;
- a first output terminal connected to a drain of the first compound semiconductor MOSFET;
- and
- a second output terminal connected to a drain of the second compound semiconductor MOSFET, wherein
- a withstand voltage between the first output terminal and the second output terminal in an off state is not less than 400 V, and
- a resistance between the first output terminal and the second output terminal in an on state is not more than 20 mΩ.
An AC switch comprising:
- a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other;
- a first output terminal connected to a drain of the first compound semiconductor MOSFET;
- a second output terminal connected to a drain of the second compound semiconductor MOSFET;
- and
- a current control circuit connected to a gate of the first compound semiconductor MOSFET and a gate of the second compound semiconductor MOSFET.
An AC switch comprising:
- a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other;
- a first output terminal connected to a drain of the first compound semiconductor MOSFET;
- and
- a second output terminal connected to a drain of the second compound semiconductor MOSFET, wherein
- at least one of the first compound semiconductor MOSFET and the second compound semiconductor MOSFET includes a current detection portion for detecting a conduction current.
Dependencies are inferred from the claim text.