Gate after Diamond Transistor
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsFrancis Kub, Karl Hobart
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Abstract
A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.
Claims13
A transistor comprising:
- a first dielectric layer on a semiconductor substrate with an ohmic contact and a source/drain metal;
- a diamond thin film layer on the first dielectric layer wherein the diamond thin film layer was deposited before the gate;
- a gate opening in the diamond thin film layer;
- a gate metal through the diamond thin film layer wherein the gate metal was deposited after the diamond thin film layer;
- and
- a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.
Dependencies are inferred from the claim text.