Compound seminconductor structure

A compound semiconductor structure comprising:

• a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm;
• an AlInGaN layer having a thickness not thinner than 10 μm and formed on said conductive SiC substrate;
• an i-type GaN layer, an i-type AlGaN layer and an n-type AlGaN layer laminated on and above said AlInGaN layer;
• a pair of source/drain electrodes in ohmic contact with said n-type AlGaN layer;
• an n-type GaN layer formed on said n-type AlGaN layer between said pair of source/drain electrodes;
• an SiN film deposited on said n-type GaN layer;
• an opening formed through said SiN film between said pair of source/drain electrodes;
• and
• a gate electrode in Schottky contact with said n-type GaN layer via said opening.