Method for manufacturing gallium nitride compound semiconductor, and semiconductor light emitting element

A method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is in a range from 450 nm to 500 nm by metalorganic chemical vapor deposition, the method comprising the steps of:

• (A) heating a substrate in a reactor;
• and
• (B) supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas, and growing the m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 775° C. to 785° C.,
• wherein step (B) includes setting a growth rate of the m-plane InGaN layer in a range from 3 nm/min to 10 nm/min.

A method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is in a range from 425 nm to 475 nm by metalorganic chemical vapor deposition, the method comprising the steps of:

• (A) heating a substrate in a reactor;
• and
• (B) supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas, and growing the m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 770° C. to 790° C.,
• wherein step (B) includes setting a growth rate of the m-plane InGaN layer to a value which is not less than 8 nm/min.

A method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is in a range from 425 nm to 475 nm by metalorganic chemical vapor deposition, the method comprising the steps of:

• (A) heating a substrate in a reactor;
• and
• (B) supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas, and growing the m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 770° C. to 790° C.,
• wherein step (B) includes setting a growth rate of the m-plane InGaN layer in a range from 4 nm/min to 5 nm/min.

A method of fabricating a semiconductor light-emitting device, comprising the steps of:

• providing a substrate;
• and
• forming a semiconductor multilayer structure on the substrate, the semiconductor multilayer structure including a light-emitting layer,
• wherein the step of forming the semiconductor multilayer structure includes forming an m-plane InGaN layer according to the gallium nitride-based compound semiconductor manufacturing method as set forth in claim 24.