Light emitting diode and method for manufacturing the same
AssigneeHon Hai Precision Industry Co., Ltd.
InventorCHIH-CHEN LAI
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Abstract
An exemplary light emitting diode includes a conductive base, an LED die, a transparent conductive layer and at least one pad. The LED die includes a p-type GaN layer connected to the base, an active layer on the p-type GaN layer, and an n-type GaN layer on the active layer. The transparent conductive layer is coated on an exposed side of the n-type GaN layer. The exposed side has an arched central portion, which in one embodiment is concave and in another embodiment is convex. The at least one n-side pad is mounted on the transparent conductive layer. The at least one n-side pad and the conductive base are for connecting with a power source.
Claims20
A light emitting diode comprising:
- a conductive base;
- an LED die formed on the base, the LED die comprising a p-type GaN layer connected to the base, an active layer on the p-type GaN layer, an n-type GaN layer on the active layer;
- a transparent conductive layer coated on the n-type GaN layer;
- and
- at least one n-side pad mounted on the transparent conductive layer, in which the at least one n-side pad and the conductive base are configured for electrically connecting with a power source.
A method for manufacturing a light emitting diode comprising:
- providing a substrate with an LED die formed thereon, the LED die comprising an n-type GaN layer, an active layer, and a p-type GaN layer arranged on the substrate sequentially along a direction away from the substrate;
- providing a conductive base and securing the conductive base to the p-type GaN layer;
- removing the substrate from the n-type GaN layer to expose the n-type GaN layer;
- coating a transparent conductive layer on the n-type GaN layer;
- and
- forming a pad on the transparent conductive layer, in which the pad and conductive base are configured for electrically connecting a power source.
Dependencies are inferred from the claim text.