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US 2011/0297952 A1Published application
Thin film transistor and display device using the same and method for manufacturing the same
AssigneeSamsung Mobile Display Co., Ltd.
InventorsJae-Seob LEE, Yong-Hwan Park, Young-Shin Pyo
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Abstract
A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.
Claims17
A thin film transistor, comprising:
- a substrate body;
- a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq;
- and
- a source electrode and a drain electrode, each in contact with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.
1 more element
A display device, comprising:
- a substrate body;
- a semiconductor layer positioned on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq;
- and
- a source electrode and a drain electrode each in contact with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.
1 more element
A method for manufacturing a display device, comprising:
- preparing a glass substrate;
- forming a substrate body comprising a plastic material on the glass substrate;
- forming a semiconductor layer comprising a polycrystalline silicon film on the substrate body;
- forming a source electrode and a drain electrode, each in contact with a semiconductor layer in an inactivated state;
- and
- separating the glass substrate from the substrate body.
3 more elements
Dependencies are inferred from the claim text.