Flat panel display device and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsZhi-Feng Zhan, Seung-Gyu Tae, Deok-Hoi Kim
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Abstract
A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.
Claims22
A flat panel display device comprising:
- a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line;
- a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT comprising a gate electrode, a source electrode, and a drain electrode;
- and
- a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor comprising a first storage electrode, a second storage electrode, and a third storage electrode.
A method of manufacturing a flat panel display device, the method comprising:
- preparing a substrate on which pixel areas are defined, the pixel areas comprising a thin film transistor (TFT) area and a storage capacitor area;
- forming an active layer on the TFT area of the substrate;
- forming a gate line extending in a first direction on the substrate, a gate electrode located in the TFT area, and a first storage electrode in the storage capacitor area;
- forming a common voltage line in a direction parallel to the gate line along with a second storage electrode in the storage capacitor area extending from the common voltage line;
- forming a data line and a source electrode in a second direction to cross with the gate line;
- and
- forming a drain electrode in the TFT area along with a third storage electrode in the storage capacitor area extending from the drain electrode.
Dependencies are inferred from the claim text.