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US 2011/0297940 A1Published application
Micromachine and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMayumi Yamaguchi, Konami Izumi
Life of this patent
Estimating the term…
Abstract
A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
Claims24
A micromachine comprising:
- an electric circuit over an insulating surface;
- and
- a structure body electrically connected to the electric circuit which is formed over the insulating surface,
- wherein the electric circuit includes a semiconductor element having two gate electrodes and a first semiconductor layer interposed between the two gate electrodes,
- the structure body includes a second semiconductor layer and a spatial portion,
- the spatial portion of the structure body is provided between the insulating surface and the second semiconductor layer,
- the second semiconductor layer is a layer including polycrystalline silicon, and
- wherein a height of the spatial portion is variable due to application of an external force to the second semiconductor layer.
5 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer over a substrate and a first sacrifice layer over the first conductive layer;
- forming a gate electrode over the substrate, and a second sacrifice layer over the first sacrifice layer;
- forming a first insulating layer over the gate electrode;
- forming a semiconductor layer including silicon over the gate electrode with the first insulating layer interposed therebetween, and a structure layer including silicon over the second sacrifice layer;
- and
- removing a part of the first sacrifice layer, and the second sacrifice layer.
3 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer over a substrate;
- forming a first sacrifice layer over the first conductive layer;
- forming a gate electrode over the substrate, and a second sacrifice layer over the first sacrifice layer;
- forming a first insulating layer over the gate electrode;
- forming a semiconductor layer including silicon over the gate electrode with the first insulating layer interposed therebetween, and a structure layer including silicon over the second sacrifice layer;
- forming a second insulating layer over the semiconductor layer and the structure layer;
- forming a second conductive layer over the second insulating layer;
- exposing a part of the first sacrifice layer and a part of the second sacrifice layer by removing a part of the second insulating layer;
- and
- removing the part of the first sacrifice layer, and the part of the second sacrifice layer.
7 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer over a substrate;
- forming a first sacrifice layer over the first conductive layer;
- forming a gate electrode over the substrate, and a second sacrifice layer over the first sacrifice layer;
- forming a first insulating layer over the gate electrode;
- forming a semiconductor layer including silicon over the gate electrode with the first insulating layer interposed therebetween, and a structure layer including silicon over the second sacrifice layer;
- forming a second conductive layer over the semiconductor layer and the structure layer by forming a conductive film and processing the conductive film into a predetermined shape;
- and
- removing the first sacrifice layer, and the second sacrifice layer.
5 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer over a substrate;
- forming a first sacrifice layer over the first conductive layer;
- forming a gate electrode over the substrate, and a second sacrifice layer over the first sacrifice layer;
- forming a first insulating layer over the gate electrode;
- forming a semiconductor layer including silicon over the gate electrode with the first insulating layer interposed therebetween, and a structure layer including silicon over the second sacrifice layer;
- forming a second conductive layer over the semiconductor layer and the structure layer;
- forming a second insulating layer over the second conductive layer;
- forming a third conductive layer over the second insulating layer;
- exposing a part of the first sacrifice layer and a part of the second sacrifice layer by removing a part of the second insulating layer;
- and
- removing the part of the first sacrifice layer, and the part of the second sacrifice layer.
8 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer and a first gate electrode over a substrate;
- forming a first insulating layer over the first gate electrode;
- forming a semiconductor layer over the first conductive layer, and over the first gate electrode with the first insulating layer interposed therebetween;
- forming a second insulating layer over the semiconductor layer over the first gate electrode;
- forming a second conductive layer over the semiconductor layer over the first conductive layer, and a second gate electrode over the semiconductor layer over the first gate electrode;
- and
- removing a part of the first conductive layer, or a part or all of the second conductive layer.
4 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer and a first gate electrode over a substrate;
- forming a first insulating layer over the first gate electrode;
- forming a semiconductor layer over the first conductive layer, and over the first gate electrode with the first insulating layer interposed therebetween;
- forming a second insulating layer over the semiconductor layer over the first gate electrode;
- forming a second conductive layer over the semiconductor layer over the first conductive layer, and a second gate electrode over the semiconductor layer over the first gate electrode;
- and
- removing the semiconductor layer over the first conductive layer.
4 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer and a first gate electrode over a substrate;
- forming a first insulating layer over the first gate electrode;
- forming a semiconductor layer over the first conductive layer, and over the first gate electrode with the first insulating layer interposed therebetween;
- forming a second insulating layer over the semiconductor layer over the first gate electrode;
- forming a second conductive layer over the semiconductor layer over the first conductive layer, and a second gate electrode over the semiconductor layer over the first gate electrode;
- forming a third insulating layer over the second conductive layer and the second gate electrode;
- forming a third conductive layer over the third insulating layer;
- exposing a part of the first conducive layer or a part of the second conductive layer by removing a part of the third insulating layer;
- and
- removing the part or all of the first conductive layer or the part or all of the second conductive layer.
7 more elements
A method for manufacturing a micromachine, comprising the steps of:
- forming a first conductive layer and a first gate electrode over a substrate;
- forming a first insulating layer over the first gate electrode;
- forming a semiconductor layer over the first conductive layer, and over the first gate electrode with the first insulating layer interposed therebetween;
- forming a second insulating layer over the semiconductor layer over the first gate electrode;
- forming a second conductive layer over the semiconductor layer over the first conductive layer and a second gate electrode over the semiconductor layer over the first gate electrode;
- forming a third insulating layer over the second conductive layer and the second gate electrode;
- forming a third conductive layer over the third insulating layer;
- exposing a part of the semiconductor layer over the first conducive layer by removing a part of the third insulating layer;
- and
- removing the semiconductor layer over the first conductive layer.
7 more elements
Dependencies are inferred from the claim text.