Thin film transistor, method of manufacturing the same, and electronic device
AssigneeSony Corporation
InventorsNoriyuki Kawashima, Hidehisa Murase, Mao Katsuhara
Life of this patent
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Abstract
A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.
Claims6
A method of manufacturing a thin film transistor comprising:
- forming a gate electrode on a substrate;
- forming a gate insulating layer on the gate electrode;
- forming an organic semiconductor layer on the gate insulating layer;
- forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method;
- and
- forming source and drain electrodes on the organic semiconductor pattern.
A thin film transistor comprising:
- a substrate;
- a gate electrode formed on the substrate;
- a gate insulating layer formed on the gate electrode;
- an organic semiconductor pattern formed on the gate insulating layer by means of a laser ablation method;
- and
- source and drain electrodes formed on the organic semiconductor pattern.
An electronic device comprising a thin film transistor, the thin film transistor including:
- a substrate;
- a gate electrode formed on the substrate;
- a gate insulating layer formed on the gate electrode;
- an organic semiconductor pattern formed on the gate insulating layer by means of a laser ablation method;
- and
- source and drain electrodes formed on the organic semiconductor pattern.
Dependencies are inferred from the claim text.