Semiconductor device

A semiconductor device comprising:

• an IGBT element region;
• a diode element region;
• and
• a first electric current detection region configured capable of detecting at least an IGBT electric current that flows through the IGBT element region,
• wherein the IGBT element region, the diode element region and the first electric current detection region are formed in one semiconductor substrate,
• a second conductivity type collector region, a first conductivity type drift region, and a second conductivity type body region are sequentially laminated in the IGBT element region,
• a second conductivity type collector region, a first conductivity type drift region, and a second conductivity type body region are sequentially laminated in at least one portion of the first electric current detection region,
• a first conductivity type cathode region, a first conductivity type drift region, and a second conductivity type body region are sequentially laminated in the diode element region,
• the first electric current detection region is arranged adjacent to the IGBT element region,
• the collector region of the IGBT element region extends to connect with the collector region of the first electric current detection region,
• the cathode region of the diode element region is arranged adjacent to the collector region of the IGBT element region, and
• the IGBT element region is disposed between the diode element region and the first electric current detection region.