Thin film transistor,method of manufacturing the same, and electronic device
AssigneeSony Corporation
InventorToshio Fukuda
Life of this patent
Estimating the term…
Abstract
A thin film transistor with improved performance is provided. The thin film transistor includes a gate electrode, an organic semiconductor layer, and a gate insulating layer which is positioned between the gate electrode and the organic semiconductor layer and is adjacent to the organic semiconductor layer. The gate insulating layer contains a material in which a first monomer as at least one of styrene and a derivative of styrene, and a second monomer having carbon-carbon double bond and a cross-linking reaction group are copolymerized and cross-linked.
Claims7
A thin film transistor comprising:
- a gate electrode;
- an organic semiconductor layer;
- and
- a gate insulating layer which is positioned between the gate electrode and the organic semiconductor layer and is adjacent to the organic semiconductor layer,
- wherein the gate insulating layer contains a material in which a first monomer as at least one of styrene and a derivative of styrene, and a second monomer having carbon-carbon double bond and a cross-linking reaction group are copolymerized and cross-linked.
A method of manufacturing a thin film transistor, comprising:
- forming a gate electrode;
- forming an organic semiconductor layer;
- and
- forming a gate insulating layer between the gate electrode and the organic semiconductor layer so as to be adjacent to the organic semiconductor layer, the gate insulating layer containing a material in which a first monomer as at least one of styrene and a derivative of styrene, and a second monomer having carbon-carbon double bond and a cross-linking reaction group are copolymerized and cross-linked.
An electronic device having a thin film transistor comprising a gate electrode, an organic semiconductor layer, and a gate insulating layer which is positioned between the gate electrode and the organic semiconductor layer and is adjacent to the organic semiconductor layer,
- wherein the gate insulating layer contains a material in which a first monomer as at least one of styrene and a derivative of styrene, and a second monomer having carbon-carbon double bond and a cross-linking reaction group are copolymerized and cross-linked.
Dependencies are inferred from the claim text.