N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits

A heterostructure comprising:

• an AlzGa1-zSb layer formed on a substrate;
• an InxGa1-xSb quantum well layer formed on the AlzGa1-zSb layer;
• an AlyGa1-ySb layer formed on the InxGa1-xSb quantum well layer;
• an InvAl1-vSb layer formed on the AlyGa1-ySb layer;
• a Te-delta doped AlwGa1-wSb layer formed on the InvAl1-vSb layer;
• and
• an InuAl1-uSb layer formed on the Te-delta doped AlwGa1-wSb layer;
• wherein the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is selectively removed from a portion of the heterostructure, the portion of the heterostructure where the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is removed forming a p-FET and the portion of the heterostructure where the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is not removed forming an n-FET, the p-FET and the n-FET forming a complementary semiconductor device;
• and
• wherein the single InxGa1-xSb quantum well layer serves as a hole transport channel for the p-FET and as an electron transport channel for the n-FET.

A method for forming a complementary semiconductor device having a single quantum well layer serving as a transport channel for both holes and electrons, comprising:

• forming a heterostructure comprising a single quantum well layer and a doped barrier layer;
• and
• removing the doped barrier layer from a portion of the heterostructure;
• wherein the portion of the heterostructure where the doped barrier layer is removed forms a p-FET and the portion of the heterostructure where the doped barrier layer is not removed forms an n-FET, the p-FET and the n-FET forming a complementary device;
• and
• wherein the single quantum well layer serves as a hole transport channel for the p-FET and as an electron transport channel for the n-FET in the complementary semiconductor device.

A method for forming a complementary semiconductor device having a single quantum well layer serving as a transport channel for both holes and electrons, comprising:

• forming a heterostructure comprising a single quantum well layer and a doped barrier layer, the doped barrier layer being formed on only a portion of the heterostructure;
• wherein the portion of the heterostructure on which the doped barrier layer is formed comprises an n-FET and the portion of the heterostructure on which the doped barrier layer is not formed comprises a p-FET, the n-FET and the p-FET forming a complementary semiconductor device;
• and
• wherein the single quantum well layer serves as a hole transport channel for the p-FET and as an electron transport channel for the n-FET in the complementary semiconductor device.

A method for forming a complementary semiconductor device having a single InxGa1-xSb quantum well layer serving as a transport channel for both holes and electrons, comprising:

• forming an AlzGa1-zSb layer on a substrate;
• forming an InxGa1-xSb quantum well layer on the AlzGa1-zSb layer;
• forming an AlyGa1-ySb layer on the InxGa1-xSb quantum well layer;
• forming an InvAl1-vSb layer on the AlyGa1-ySb layer;
• forming a Te-delta doped AlwGa1-wSb layer on the InvAl1-vSb layer;
• and
• forming an InuAl1-uSb layer on the Te-delta doped AlwGa1-wSb layer;
• selectively removing the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer from a portion of the heterostructure, the portion of the heterostructure where the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is removed forming a p-FET and the portion of the heterostructure where the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is not removed forming an n-FET, the p-FET and the n-FET forming a complementary semiconductor device;
• wherein the single InxGa1-xSb quantum well layer serves as a hole transport channel for the p-FET and as an electron transport channel for the n-FET in the complementary semiconductor device.

A method for forming a complementary semiconductor device having a single InxGa1-xSb quantum well layer serving as a transport channel for both holes and electrons, comprising:

• forming an AlzGa1-zSb layer on a substrate;
• forming an InxGa1-xSb quantum well layer on the AlzGa1-zSb layer;
• forming an AlyGa1-ySb layer on the InxGa1-xSb quantum well layer;
• forming an InvAl1-vSb layer on the AlyGa1-ySb layer;
• forming a Te-delta doped AlwGa1-wSb layer on a portion of the InvAl1-vSb layer;
• and
• forming an InuAl1-uSb layer on the Te-delta doped AlwGa1-wSb layer;
• the portion of the heterostructure on which the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is formed comprising an n-FET, and the InuAl1-uSb layer and the Te-delta doped AlwGa1-wSb layer is not formed comprising a p-FET, the n-FET and the p-FET forming a complementary semiconductor device;
• wherein the single InxGa1-xSb quantum well layer serves as a hole transport channel for the p-FET and as an electron transport channel for the n-FET in the complementary semiconductor device.