Magnetic memory element and magnetic memory

A magnetic memory comprising:

• a plurality of magnetic memory cells configured to be arranged in a matrix shape, each of plurality of magnetic memory cells including a magnetic memory element,
• wherein said magnetic memory element comprising:
• a first magnetization free layer configured to be formed of a ferromagnetic material having perpendicular magnetic anisotropy:
• a second magnetization free layer configured to be provided near said first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy;
• a reference layer configured to be formed of a ferromagnetic material having in-plane magnetic anisotropy;
• and
• a non-magnetic layer configured to be provided between said second magnetization free layer and said reference layer.
• wherein said first magnetization free layer includes:
• a first magnetization fixed region of which magnetization is fixed,
• a second magnetization fixed region of which magnetization is fixed, and
• a magnetization free region which is connected to said first magnetization fixed region and said second magnetization fixed region, and of which magnetization can be switched,
• wherein said second magnetization free layer is included in said first magnetization free layer in a plane parallel to a substrate, and
• wherein said second magnetization free layer is provided in a first direction away from said magnetization free region in said plane.