Phase Change Memory Cells and Fabrication Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJinesh B.P. Kochupurackal, Robertus A.M. Wolters, Michael A.A. Zandt
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Abstract
A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (10). A contact (15) made of phase change memory material may also be provided. The dielectric barrier (12) is substantially uniform e.g. of substantially uniform thickness, e.g. ≧5 nm.
Claims15
A phase change memory cell, comprising:
- a first electrode;
- a second electrode;
- phase change memory material between the first electrode and the second electrode;
- and
- a dielectric barrier arranged to provide electron tunnelling to the phase change memory material.
A method of fabricating a phase change memory cell, the method comprising:
- providing a first electrode;
- providing a second electrode;
- providing phase change memory material between the first electrode and the second electrode;
- and
- providing a dielectric barrier such that electron tunnelling to the phase change material is facilitated.
The method of operating a phase change memory cell comprising a first electrode, a second electrode, and phase change memory material between the first electrode and the second electrode;
- the method comprising changing the phase of the phase change memory material by electron tunnelling to the phase change memory material.
Dependencies are inferred from the claim text.