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US 2011/0297893 A1Published application
Production method of n-type sic single crystal, n-type sic single crystal obtained thereby and application of same
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsAkinori Seki, Yasuyuki Fujiwara
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Abstract
A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal.
Claims9
A method for producing n-type SiC single crystal, comprising:
- adding gallium and nitrogen, which is a donor element for obtaining an n-type semiconductor, during crystal growth of SiC single crystal, such that an amount of nitrogen represented in atm unit is greater than an amount of gallium represented in atm unit.
A method for producing n-type SiC single crystal, comprising:
- adding gallium and nitrogen, which is a donor element for obtaining an n-type semiconductor, during crystal growth of SiC single crystal by a solution method.
Dependencies are inferred from the claim text.