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US 2011/0284983 A1Published application
Photodiode device and manufacturing method thereof
AssigneeSolapoint Corporation
InventorsChan Shin WU, Yung-Yi TU, Shan Hua WU
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Abstract
A photodiode device and the manufacturing method of the same are provided. The photodiode device includes a substrate; an epitaxy layer on the substrate, the epitaxy layer including a window layer and a cap layer on the window layer, the cap layer covering a portion of the window layer; and a patterned conductive layer on the cap layer, the patterned conductive layer being formed with a bottom area and a top area wherein the bottom area is greater than the top area.
Claims14
A method of manufacturing a photodiode device, comprising:
- providing a wafer having a substrate and an epitaxy layer, the epitaxy layer having a window layer and a cap layer on the window layer;
- depositing a patterned conductive layer on the epitaxy layer, the patterned conductive layer having a footing structure horizontally extending from the bottom of the patterned conductive layer, the footing structure having a thickness equal to or less than one fifteenth of a thickness of the patterned conductive layer;
- and
- removing a portion of the footing structure.
1 more element
A photodiode device, comprising,
- a substrate;
- a epitaxy layer on the substrate, the epitaxy layer having a window layer and a cap layer covering a portion of the window layer;
- and
- a patterned conductive layer on the cap layer, wherein the patterned conductive layer being formed with a bottom area and a top area, wherein the bottom area is greater than the top area.
1 more element
Dependencies are inferred from the claim text.