Methods of selectively depositing an epitaxial layer
OwnerZhiyuan Ye, Saurabh Chopra +1inventors
InventorsZhiyuan Ye, Saurabh Chopra, Yihwan Kim
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Abstract
Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber.
Claims17
Apparatus for processing a substrate comprising:
- a process chamber having a substrate support disposed therein;
- a deposition gas source coupled to the process chamber;
- an etching gas source coupled to the process chamber, the etching gas source comprising:
- a hydrogen and halogen gas source;
- and
- a germanium gas source;
- an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius;
- and
- an exhaust system coupled to the process chamber to control the pressure in the process chamber.
Apparatus for processing a substrate comprising:
- a process chamber having a substrate support disposed therein;
- a deposition gas source coupled to the process chamber;
- an etching gas source coupled to the process chamber, the etching gas source comprising:
- a first gas source to provide a first gas comprising hydrogen and halogen;
- and
- a second gas source to provide a second gas comprising germanium;
- an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius;
- and
- an exhaust system coupled to the process chamber to control the pressure in the process chamber.
Dependencies are inferred from the claim text.