Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus

A method of processing a substrate comprising performing a cycle a predetermined number of times to form an oxycarbonitride film having a predetermined thickness on a substrate in a process vessel, wherein the cycle comprises steps of:

• (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate;
• and
• (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer,
• wherein the set of steps comprises:
• (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate;
• (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon;
• and
• (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.

A substrate processing apparatus comprising:

• a process vessel configured to accommodate a substrate;
• a heater configured to heat the substrate in the process vessel;
• an element-containing gas supply system configured to supply a gas containing an element into the process vessel;
• a carbon-containing gas supply system configured to supply a carbon-containing gas into the process vessel;
• a nitrogen-containing gas supply system configured to supply a nitrogen-containing gas into the process vessel;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the process vessel;
• a pressure regulating unit configured to regulate a pressure in the process vessel;
• and
• a control unit configured to control the heater, the element-containing gas supply system, the carbon-containing gas supply system, the nitrogen-containing gas supply system, the oxygen-containing gas supply system and the pressure regulating unit such that an oxycarbonitride film having a predetermined thickness is formed on the substrate by performing a cycle a predetermined number of times wherein the cycle comprises processes of:
• (a) performing a set of processes a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate;
• and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer,
• wherein the set of processes comprises:
• (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate;
• (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon;
• and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.