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US 2011/0256731 A1Published application
Method for fabricating a gate dielectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yang LEE, Xiong-Fei YU, Jian-Hao CHEN, Cheng-Hao HOU, Da-Yuan LEE, Kuang-Yuan HSU
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Abstract
A method for fabricating the gate dielectric layer comprises forming a high-k dielectric layer over a substrate; forming an oxygen-containing layer on the high-k dielectric layer by an atomic layer deposition process; and performing an inert plasma treatment on the oxygen-containing layer.
Claims20
A method for fabricating a high-k dielectric layer, comprising:
- forming a high-k dielectric layer over a substrate;
- forming an oxygen-containing layer on the high-k dielectric layer by an atomic layer deposition process;
- and
- performing an inert plasma treatment on the oxygen-containing layer.
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A method for fabricating a gate dielectric layer in a semiconductor device, comprising:
- forming a hafnium oxide layer as the gate dielectric layer over a substrate by a first atomic layer deposition process;
- forming an oxygen-containing layer without metallic element on the hafnium oxide layer by a second atomic layer deposition process;
- and
- performing an inert plasma treatment on the oxygen-containing layer.
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Dependencies are inferred from the claim text.